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| SUD40N10-25 New Product Vishay Siliconix N-Channel 100-V (D-S) 175_C MOSFET PRODUCT SUMMARY VDS (V) 100 rDS(on) (W) 0.025 @ VGS = 10 V 0.028 @ VGS = 4.5 V ID (A) 40 38 D TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD40N10-25 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C)b Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Repetitive Avalanche Energy (Duty Cycle v 1%) Maximum Power Dissipation TA = 25_C Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C PD TJ, Tstg TC = 25_C TC = 125_C Symbol VDS VGS ID IDM IS IAR EAR Limit 100 "20 40 23 70 40 40 80 33b 3a -55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambienta Junction-to-Case Notes a. Surface Mounted on 1" x1" FR4 Board. b. See SOA curve for voltage derating. Document Number: 71140 S-00171--Rev. A, 14-Feb-00 www.vishay.com S FaxBack 408-970-5600 t v 10 sec Steady State Symbol RthJA RthJC Typical 15 40 1.2 Maximum 18 50 1.5 Unit _C/W 2-1 SUD40N10-25 Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 80 V, VGS = 0 V Zero Gate Voltage Drain Current Z G Vl DiC IDSS VDS = 80 V, VGS = 0 V, TJ = 125_C VDS = 80 V, VGS = 0 V, TJ = 175_C On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 40 A DiS OS Ri Drain-Source On-State Resistanceb rDS(on) VGS = 10 V, ID = 40 A, TJ = 125_C VGS = 10 V, ID = 40 A, TJ = 175_C VGS = 4.5 V, ID = 20 A Forward Transconductanceb gfs VDS = 15 V, ID = 40 A 0.022 70 70 0.02 0.025 0.05 0.063 0.028 S W 100 V 1.0 3.0 "100 1 50 250 A mA A nA Symbol Test Condition Min Typa Max Unit Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Turn-On Delay Timec Rise Timec Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = 50 V, RL = 1 25 W V, 1.25 ID ^ 40 A, VGEN = 10 V RG = 2 5 W A V, 2.5 V, VDS = 50 V, VGS = 10 V ID = 40 A V VGS = 0 V, VDS = 25 V F = 1 MH V V, MHz 2400 290 120 40 11 9 8 40 15 80 13 60 ns 25 120 60 nC C pF F Turn-Off Delay Timec Fall Timec Source-Drain Diode Ratings and Characteristic (TC = 25_C) Pulsed Current Diode Forward Voltageb ISM VSD trr IF = 40 A, VGS = 0 V IF = 40 A, di/dt = 100 A/ms 1.0 75 70 1.5 120 A V ns Source-Drain Reverse Recovery Time Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 71140 S-00171--Rev. A, 14-Feb-00 SUD40N10-25 New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 160 VGS = 10 thru 6 V 120 I D - Drain Current (A) I D - Drain Current (A) 60 5V 80 100 Vishay Siliconix Transfer Characteristics 80 4V 40 40 TC = 125_C 25_C -55_C 20 3V 0 0 2 4 6 8 10 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transconductance 100 TC = -55_C 80 g fs - Transconductance (S) r DS(on)- On-Resistance ( W ) 25_C 0.04 0.05 On-Resistance vs. Drain Current 60 125_C 0.03 VGS = 4.5 V 40 0.02 VGS = 10 V 0.01 20 0 0 10 20 30 40 50 60 0 0 20 40 60 80 100 ID - Drain Current (A) ID - Drain Current (A) Capacitance 4000 20 Gate Charge V GS - Gate-to-Source Voltage (V) 16 3000 C - Capacitance (pF) Ciss 2000 VDS = 50 V ID = 40 A 12 8 1000 Crss Coss 4 0 0 20 40 60 80 100 0 0 20 40 60 80 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Document Number: 71140 S-00171--Rev. A, 14-Feb-00 www.vishay.com S FaxBack 408-970-5600 2-3 SUD40N10-25 Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 3.0 VGS = 10 V ID = 40 A I S - Source Current (A) 100 Source-Drain Diode Forward Voltage 2.5 r DS(on)- On-Resistance ( W ) (Normalized) 2.0 TJ = 175_C 10 1.5 1.0 TJ = 25_C 0.5 0 -50 1 -25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) THERMAL RATINGS Maximum Avalanche Drain Current vs. Case Temperature 50 100 Limited by rDS(on) 40 I D - Drain Current (A) I D - Drain Current (A) 10 1 ms 10 ms 100 ms Safe Operating Area 30 20 10 ms 1 TC = 25_C Single Pulse 100 ms 1 s, dc 10 0 0 25 50 75 100 125 150 175 TC - Case Temperature (_C) 0.1 0.1 1 10 100 1000 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 30 www.vishay.com S FaxBack 408-970-5600 2-4 Document Number: 71140 S-00171--Rev. A, 14-Feb-00 |
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